cystech electronics corp. spec. no. : c198q8 issued date : 2010.11.29 revised date : page no. : 1/8 HBNP1268Q8 cystek product specification general purpose npn / pnp epitaxial planar transistors (quadruple transistors) HBNP1268Q8 npn pnp bv ceo 50v -30v i c 4a -5a r ce(sat)(typ) 125m 180m features ? includes two npn chips and two pnp chips in a sop-8 package. ? pb-free lead plating package equivalent circuit outline HBNP1268Q8 sop-8 e emitter c collector b base
cystech electronics corp. spec. no. : c198q8 issued date : 2010.11.29 revised date : page no. : 2/8 HBNP1268Q8 cystek product specification absolute maximum ratings (each transistor, ta=25 c) limits parameter symbol npn pnp unit collector-base voltage v cbo 80 -30 collector-emitter voltage v ceo 50 -30 emitter-base voltage v ebo 6 -5 v collector current (dc) i c 4 -5 a collector current (pulse) (note 1) i cm 7 -7 a pd 1.38 w total power dissipation (note 2) linear derating factor 0.01 w / c operating junction and storage temp erature range tj ; tstg -55~+150 c thermal resistance, junction-to-ambient (note 2) rth,ja 90 c/w note : 1. pulse width 300 s, duty cycle 2%. 2. su rface mounted on 1 in2 copper pad of fr-4 board; 135 c/w when mounted on minimum copper pad. characteristics (tj=25 c, unless otherwise specified) npn 1 & npn 2 symbol min. typ. max. unit test conditions bv cbo 80 - - v i c =100 a, i e =0 bv ceo 50 - - v i c =1ma, i b =0 bv ebo 6 - - v i e =50 a, i c =0 i cbo - - 100 na v cb =80v, i e =0 i ceo - - 1 a v ce =50v, i b =0 i ebo - - 100 na v eb =6v, i c =0 *v ce(sat) - - 100 mv i c =400ma, i b =20ma *v ce(sat) - - 0.25 v i c =1a, i b =10ma *v ce(sat) - 0.25 0.5 v i c =2a, i b =100ma *r ce(sat) - 0.125 0.25 i c =2a, i b =100ma *v be(sat) - - 1.5 v i c =2a, i b =200ma *h fe 1 250 - - - v ce =2v, i c =100ma *h fe 2 280 - 600 - v ce =2v, i c =500ma *h fe 3 100 - - - v ce =2v, i c =1a f t - 90 - mhz v ce =5v, i c =0.1a, f=100mhz cob - 13 - pf v cb =10v, f=1mhz
cystech electronics corp. spec. no. : c198q8 issued date : 2010.11.29 revised date : page no. : 3/8 HBNP1268Q8 cystek product specification pnp 1 & pnp 2 symbol min. typ. max. unit test conditions i cbo - - -100 na v cb =-30v, i e =0a i ceo - - -100 na v ce =-30v, i b =0a i ebo - - -2 ma v eb =-5v 120 - - - v ce =-2v, i c =-100ma 140 - - - v ce =-2v, i c =-1a *h fe 100 - - - v ce =-2v, i c =-4a - -0.25 -0.4 v i c =-1a, i b =-5ma - -0.34 -0.45 v i c =-2a, i b =-20ma *v ce(sat) - -0.53 -0.6 v i c =-3a, i b =-30ma *r ce(sat) - -0.18 -0.2 i c =-3a, i b =-30ma r 1 280 400 520 - r 2 7 10 13 k - f t 100 - - mhz v ce =-10v, i e =-500ma, f=100mhz *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping HBNP1268Q8 sop-8 (pb-free lead plating package) 3000 pcs / tape & reel
cystech electronics corp. spec. no. : c198q8 issued date : 2010.11.29 revised date : page no. : 4/8 HBNP1268Q8 cystek product specification typical characteristics npn 1 & npn 2 emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0 ib=100ua ib=200ua ib=300ua ib=400ua ib=500ua emitter grounded output characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0 ib=500ua ib=1ma ib=1.5ma ib=2ma ib=2.5ma emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 3 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0 ib=2ma ib=4ma ib=6ma ib=8m a ib=10ma emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=0 ib=5ma ib = 10 m a ib=15ma ib=20ma ib = 25m a current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v vce=5v saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) ic=50ib ic=20ib ic=100ib vce(sat)
cystech electronics corp. spec. no. : c198q8 issued date : 2010.11.29 revised date : page no. : 5/8 HBNP1268Q8 cystek product specification saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbe(sat)@ic=10ib capacitance vs reverse-biased voltage 1 10 100 1000 0.1 1 10 100 reverse-biased voltage---(v) capacitance---(pf) cob cib pnp 1 & pnp 2 current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=1v vce=2v vce=5v saturation voltage vs collector current 10 100 1000 10000 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat@ic=100ib vcesat@ic=200ib saturation voltage vs collector current 10 100 1000 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) ib=20ma vcesat ib=2ma ib=5ma ib=10ma on voltage vs collector current 100 1000 10000 100000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vce=2v
cystech electronics corp. spec. no. : c198q8 issued date : 2010.11.29 revised date : page no. : 6/8 HBNP1268Q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c198q8 issued date : 2010.11.29 revised date : page no. : 7/8 HBNP1268Q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c198q8 issued date : 2010.11.29 revised date : page no. : 8/8 HBNP1268Q8 cystek product specification sop-8 dimension *: typical inches millimeters inches millimeters dim min. max. min. max. 8-lead sop-8 plastic package cystek packa g e code: q8 marking: top view a b front view f c d e g part a i h j k o m l n right side view part a date code device name np1268 dim min. max. min. max. a 0.1909 0.2007 4.85 5.10 i 0.0019 0.0078 0.05 0.20 b 0.1515 0.1555 3.85 3.95 j 0.0118 0.0275 0.30 0.70 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0098 0.19 0.25 d 0.0480 0.0519 1.22 1.32 l 0.0145 0.0204 0.37 0.52 e 0.0145 0.0185 0.37 0.47 m 0.0118 0.0197 0.30 0.50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0570 0.0649 1.45 1.65 o 0.0000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0 important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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